STGB10NB37LZ

Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Power Dissipation : 125 W
Continuous Collector Current at 25 C : 20 A
Package / Case : D2PAK-3
Collector-Emitter Saturation Voltage : 1.2 V
Maximum Gate Emitter Voltage : 16 V
Collector- Emitter Voltage VCEO Max : 1.8 V
Gate-Emitter Leakage Current : 700 uA


Features:

 POLYSILICONGATE VOLTAGE DRIVEN
 LOW THRESHOLD VOLTAGE
 LOW ON-VOLTAGEDROP
 HIGH CURRENT CAPABILITY
 HIGH VOLTAGE CLAMPING FEATURE
 SURFACE-MOUNTING D2PAK (TO-263) POWERPACKAGE IN
   BE (NO SUFFIX) R IN TAPE & REEL (SUFFIX "T4")


Application

AUTOMOTIVE IGNITION


Specifications

Symbol	Parameter	Value		Unit
VCES	Collector-Emitter Voltage (VGS = 0)	CLAMPED		V
VECR	Emitter-Collector Voltage	18		V
VGE	Gate-Emitter Voltage	CLAMPED		V
IC	Collector Current (continuous) at Tc = 25 oC	20		A
IC	Collector Current (continuous) at Tc = 100 oC	20		A
ICM(•)	Collector Current (pulsed)	60		A
Ptot	Total Dissipation at Tc = 25 oC	125		W
	Derating Factor	0.83		W/oC
Tstg	Storage Temperature	65 to 175		oC
Tj	Max.Operating Junction Temperature	175		oC

Description

Using the latest high voltage technology based n patented strip layout, STGB10NB37LZ SGS-Thomson has esigned an advanced family of IGBTs with utstandingperformances.

The STGB10NB37LZ built in collector-gate zener exhibits a very recise active clamping while the gate-emitter ener supplies an ESD protection.