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STGD18N40LZ

Features: ` AEC Q101 compliant` 180 mJ of avalanche energy @ TC = 150,L = 3 mH` ESD gate-emitter protection` Gate-collector high voltage clamping` Logic level gate drive` Low saturation voltage` High pulsed current capability` Gate and gate-emitter resistorApplication· Pencil coil electron...

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SeekIC No. : 004507647 Detail

STGD18N40LZ: Features: ` AEC Q101 compliant` 180 mJ of avalanche energy @ TC = 150,L = 3 mH` ESD gate-emitter protection` Gate-collector high voltage clamping` Logic level gate drive` Low saturation voltag...

STGD18N40LZ Data Sheet

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Part Number:
STGD18N40LZ
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/20

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Product Details

Description



Features:

 `   AEC Q101 compliant
 ` 180 mJ of avalanche energy @ TC = 150,L = 3 mH
 ` ESD gate-emitter protection
 ` Gate-collector high voltage clamping
 ` Logic level gate drive
 ` Low saturation voltage
 ` High pulsed current capability
 ` Gate and gate-emitter resistor


Application

 ·  Pencil coil electronic ignition driver


Specifications

Symbol Parameter
Value
Unit
DPAK
IPAK
D²PAK
I²PAK
VCES Collector-emitter voltage (VGE = 0)
VCES(clamped)
V
VECS Emitter collector voltage (VGE = 0)
20
V
IC(1) Collector current (continuous) at TC = 100
25
30
A
ICP(2) Pulsed collector current
40
A
VGE Gate-emitter voltage
VGE(clamped)
V
PTOT Total dissipation at TC = 25
125
150
W
EAS Single pulse energy TC= 25 , L = 3 mH, RG = 1 K
300
mJ
EAS Single pulse energy TC=150 , L = 3 mH, RG = 1 K
180
mJ
ESD Human body model, R= 1550 , C = 100 pF
8
kV
Machine model, R = 0, C = 100 pF
800
V
Charged device model
2
kV
Tstg Storage temperature
55 to 175
Tj Operating junction temperature
1. Calculated according to the iterative formula:IC(TC)=TJMAX TC/[RTHJ C * VCESAT(MAX)(TC, IC)]
2. Pulse width limited by max. junction temperature allowed


Description

This STGD18N40LZ IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.




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