IGBT Transistors EAS 180 mJ-400 V clamped IGBT
STGD18N40LZT4: IGBT Transistors EAS 180 mJ-400 V clamped IGBT
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 360 V | ||
| Maximum Gate Emitter Voltage : | 12 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | DPAK-3 | Packaging : | Reel |
| Technical/Catalog Information | STGD18N40LZT4 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Input Type | Logic |
| Voltage - Collector Emitter Breakdown (Max) | 420V |
| Current - Collector (Ic) (Max) | 25A |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 4.5V, 10A |
| Power - Max | 125W |
| Mounting Type | Surface Mount |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STGD18N40LZT4 STGD18N40LZT4 497 7010 2 ND 49770102ND 497-7010-2 |