IGBT Transistors EAS 180 mJ-400 V clamped IGBT
STGD18N40LZ-1: IGBT Transistors EAS 180 mJ-400 V clamped IGBT
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| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 360 V | ||
| Maximum Gate Emitter Voltage : | 12 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | IPAK-3 | Packaging : | Tube |