IGBT Transistors 4.5 A 600V IGBT 20V VGE 25A IFSM
STGD3HF60HDT4: IGBT Transistors 4.5 A 600V IGBT 20V VGE 25A IFSM
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| Collector- Emitter Voltage VCEO Max : | 600 V | Collector-Emitter Saturation Voltage : | 2.95 V |
| Maximum Gate Emitter Voltage : | 20 V | Continuous Collector Current at 25 C : | 7.5 A |
| Gate-Emitter Leakage Current : | 100 nA | Power Dissipation : | 38 W |
| Maximum Operating Temperature : | + 150 C | Package / Case : | DPAK |
| Packaging : | Reel |