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STGD3NB60HD

Features: ·HIGH INPUT IMPEDANCE·OFF LOSSES INCLUDE TAIL CURRENT·LOW GATE CHARGE·HIGH FREQUENCY OPERATION·TYPICAL SHORT CIRCUIT WITHSTAND TIME 5micro S-family, 4 micro H family·CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODEApplication·HIGH FREQUENCY MOTOR CONTROLS·SMPS and PFC IN BOTH HARD ...

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SeekIC No. : 004507649 Detail

STGD3NB60HD: Features: ·HIGH INPUT IMPEDANCE·OFF LOSSES INCLUDE TAIL CURRENT·LOW GATE CHARGE·HIGH FREQUENCY OPERATION·TYPICAL SHORT CIRCUIT WITHSTAND TIME 5micro S-family, 4 micro H family·CO-PACKAGED WITH TURBO...

STGD3NB60HD Data Sheet

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Part Number:
STGD3NB60HD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

·HIGH INPUT IMPEDANCE
·OFF LOSSES INCLUDE TAIL CURRENT
·LOW GATE CHARGE
·HIGH FREQUENCY OPERATION
·TYPICAL SHORT CIRCUIT WITHSTAND TIME 5micro S-family, 4 micro H family
·CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE


Application

·HIGH FREQUENCY MOTOR CONTROLS
·SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES


Specifications

Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VGS = 0) 600 V
VECR Emitter-Collector Voltage 20 V
VGE Gate-Emitter Voltage ± 20 V
IC Collector Current (continuous) at TC = 25°C 10 A
IC Collector Current (continuous) at TC = 100°C 6 A
ICM (`) Collector Current (pulsed) 24 A
PTOT Total Dissipation at TC = 25°C 50 W
  Derating Factor 0.4 W/°C
Tstg Storage Temperature 55 to 150 °C
Tj Operating Junction Temperature
(`) Pulse width limited by safe operating area


Description

Using the latest high voltage technology based on a patented strip layout, STGD3NB60HD STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.




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