STGD3NB60K

Features: · HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)· LOW ON-VOLTAGE DROP (Vcesat)· LOW GATE CHARGE· HIGH CURRENT CAPABILITY· OFF LOSSES INCLUDE TAIL CURRENT· HIGH FREQUENCY OPERATION SHORT CIRCUIT RATEDApplication· HIGH FREQUENCY MOTOR CONTROLS· SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOL...

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STGD3NB60K Picture
SeekIC No. : 004507650 Detail

STGD3NB60K: Features: · HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)· LOW ON-VOLTAGE DROP (Vcesat)· LOW GATE CHARGE· HIGH CURRENT CAPABILITY· OFF LOSSES INCLUDE TAIL CURRENT· HIGH FREQUENCY OPERATION SHORT CIRCUIT RAT...

floor Price/Ceiling Price

Part Number:
STGD3NB60K
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

· HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
· LOW ON-VOLTAGE DROP (Vcesat)
· LOW GATE CHARGE
· HIGH CURRENT CAPABILITY
· OFF LOSSES INCLUDE TAIL CURRENT
· HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED



Application

· HIGH FREQUENCY MOTOR CONTROLS
· SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIES



Specifications

Symbol
Parameter
Value
Unit
 
TO-220
D2PAK
TO-220FP
DPAK
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VECR
Emitter-Collector Voltage
20
V
VGE
Gate-Emitter Voltage
±20
V
IC
Collector Current (continuos) at TC = 25
6
6
6
A
IC

Collector Current (continuos) at TC = 100
3
3
3
A
ICM ()
Collector Current (pulsed)
24
24
24
A
If (1)
Forward Current
3
A
Ifm (1)
Forward Current Pulsed
24
A
PTOT
Total Dissipation at TC = 25
68
25
60
W
Derating Factor
0.75
W/
VISO
Insulation Withstand Voltage A.C.
--
2500
--
V
Tstg
Storage Temperature
55 to 150
150
Tj
Max. Operating Junction Temperature



Description

Using the latest high voltage technology based on a patented strip layout, STGD3NB60K STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short circuit withstand capability.




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