Features: · HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)· LOW ON-VOLTAGE DROP (Vcesat)· LOW GATE CHARGE· HIGH CURRENT CAPABILITY· OFF LOSSES INCLUDE TAIL CURRENT· HIGH FREQUENCY OPERATION SHORT CIRCUIT RATEDApplication· HIGH FREQUENCY MOTOR CONTROLS· SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOL...
STGD3NB60K: Features: · HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)· LOW ON-VOLTAGE DROP (Vcesat)· LOW GATE CHARGE· HIGH CURRENT CAPABILITY· OFF LOSSES INCLUDE TAIL CURRENT· HIGH FREQUENCY OPERATION SHORT CIRCUIT RAT...
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|
Symbol |
Parameter |
Value |
Unit | ||
|
TO-220 D2PAK |
TO-220FP |
DPAK |
|||
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | ||
|
VECR |
Emitter-Collector Voltage |
20 |
V | ||
|
VGE |
Gate-Emitter Voltage |
±20 |
V | ||
|
IC |
Collector Current (continuos) at TC = 25 |
6 |
6 |
6 |
A |
|
IC |
Collector Current (continuos) at TC = 100 |
3 |
3 |
3 |
A |
|
ICM () |
Collector Current (pulsed) |
24 |
24 |
24 |
A |
|
If (1) |
Forward Current |
3 |
A | ||
|
Ifm (1) |
Forward Current Pulsed |
24 |
A | ||
|
PTOT |
Total Dissipation at TC = 25 |
68 |
25 |
60 |
W |
| Derating Factor |
0.75 |
W/ | |||
|
VISO |
Insulation Withstand Voltage A.C. |
-- |
2500 |
-- |
V |
|
Tstg |
Storage Temperature |
55 to 150 150 |
|||
|
Tj |
Max. Operating Junction Temperature | ||||
Using the latest high voltage technology based on a patented strip layout, STGD3NB60K STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short circuit withstand capability.