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STGD3NB60KD

Features: · HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)· LOW ON-VOLTAGE DROP (Vcesat)· LOW ON-LOSSES· LOW GATE CHARGE· HIGH CURRENT CAPABILITY· OFF LOSSES INCLUDE TAIL CURRENT· VERY HIGH FREQUENCY OPERATION· SHORT CIRCUIT RATED· LATCH CURRENT FREE OPERATION· CO-PACKAGED WITH TURBOSWITCH™ ANTIPARAL...

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SeekIC No. : 004507651 Detail

STGD3NB60KD: Features: · HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)· LOW ON-VOLTAGE DROP (Vcesat)· LOW ON-LOSSES· LOW GATE CHARGE· HIGH CURRENT CAPABILITY· OFF LOSSES INCLUDE TAIL CURRENT· VERY HIGH FREQUENCY OPERATI...

STGD3NB60KD Data Sheet

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Part Number:
STGD3NB60KD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

· HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
· LOW ON-VOLTAGE DROP (Vcesat)
· LOW ON-LOSSES
· LOW GATE CHARGE
· HIGH CURRENT CAPABILITY
· OFF LOSSES INCLUDE TAIL CURRENT
· VERY HIGH FREQUENCY OPERATION
· SHORT CIRCUIT RATED
· LATCH CURRENT FREE OPERATION
· CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE


Application

· HIGH FREQUENCY MOTOR CONTROLS
· SMPS and PFC


Specifications

Symbol
Parameter
Value
Unit
VCES
 Collector-Emitter Voltage (VGS = 0)
600
V
VECR
 Emitter-Collector Voltage
20
V
VGE
 Gate-Emitter Voltage
±20
V
VGS
 Gate- source Voltage
±30
V
IC
 Drain Current (continuos) at TC = 25
6
A
IC
 Drain Current (continuos) at TC = 100
3
A
IDM (`)
 Drain Current (pulsed)
24
A
Tsc
 Short Circuit Withstand
10
s
Ptot
 Total Dissipation at TC = 25
35
W
 Derating Factor
0.28
W/
Tstg
 Storage Temperature
-55 to 150
Tj
 Max.Operating Junction Temperature
150

(`) Pulse width limited by safe operating area



Description

Using the latest high voltage technology based on a patented strip layout, STGD3NB60KD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short circuit withstand capability.




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