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STGD3NB60M

Features: · HIGH INPUT IMPEDANCE· LOW ON-VOLTAGE DROP (Vcesat)· OFF LOSSES INCLUDE TAIL CURRENT· LOW GATE CHARGE· HIGH CURRENT CAPABILITY· HIGH FREQUENCY OPERATION· CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODEApplication· MOTOR CONTROLS· SMPS AND PFC AND BOTH HARD SWITCH AND RESONANT TOP...

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SeekIC No. : 004507652 Detail

STGD3NB60M: Features: · HIGH INPUT IMPEDANCE· LOW ON-VOLTAGE DROP (Vcesat)· OFF LOSSES INCLUDE TAIL CURRENT· LOW GATE CHARGE· HIGH CURRENT CAPABILITY· HIGH FREQUENCY OPERATION· CO-PACKAGED WITH TURBOSWITCH͐...

STGD3NB60M Data Sheet

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Part Number:
STGD3NB60M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

· HIGH INPUT IMPEDANCE
· LOW ON-VOLTAGE DROP (Vcesat)
· OFF LOSSES INCLUDE TAIL CURRENT
· LOW GATE CHARGE
· HIGH CURRENT CAPABILITY
· HIGH FREQUENCY OPERATION
· CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE


Application

· MOTOR CONTROLS
· SMPS AND PFC AND BOTH HARD SWITCH AND RESONANT TOPOLOGIES


Specifications

Symbol
Parameter
Value
Unit
   
TO-220
DPAK
VCES
 Collector-Emitter Voltage (VGS = 0)
600
V
VGE
 Gate-Emitter Voltage
±20
V
IC
 Drain Current (continuos) at TC = 25
6
A
IC
 Drain Current (continuos) at TC = 100
3
A
IDM (`)
 Drain Current (pulsed)
24
A
Ptot
 Total Dissipation at TC = 25
68
68
W
 Derating Factor
0.55
0.47
W/
Tstg
 Storage Temperature
-55 to 150
Tj
 Max.Operating Junction Temperature
150

(`) Pulse width limited by safe operating area



Description

Using the latest high voltage technology based on a patented strip layout, STGD3NB60M STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding perfomances. The suffix "M" identifies a family optimized to achieve very low switching switching times for high frequency applications (<20KHZ)




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