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STGD3NB60SD-1

IGBT Transistors N Ch 3A 600V

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SeekIC No. : 00143890 Detail

STGD3NB60SD-1: IGBT Transistors N Ch 3A 600V

STGD3NB60SD-1 Data Sheet

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Part Number:
STGD3NB60SD-1
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : DPAK-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : DPAK-3


Parameters:

Technical/Catalog InformationSTGD3NB60SD-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)6A
Vce(on) (Max) @ Vge, Ic1.5V @ 15V, 3A
Power - Max48W
Mounting TypeSurface Mount
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STGD3NB60SD 1
STGD3NB60SD1



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