IGBT Transistors N-Ch 600 Volt 3 Amp
STGD3NB60SDT4: IGBT Transistors N-Ch 600 Volt 3 Amp
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| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
| Collector-Emitter Saturation Voltage : | 1.5 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
| Continuous Collector Current at 25 C : | 6 A | Gate-Emitter Leakage Current : | +/- 100 nA | ||
| Power Dissipation : | 48 W | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-252-3 | Packaging : | Reel |
| Technical/Catalog Information | STGD3NB60SDT4 |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 6A |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 3A |
| Power - Max | 48W |
| Mounting Type | Surface Mount |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| Packaging | Digi-Reel? |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STGD3NB60SDT4 STGD3NB60SDT4 497 4109 6 ND 49741096ND 497-4109-6 |