STGD5NB120SZ-1

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : IPAK-3


Features:

 HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
 LOW ON-VOLTAGE DROP (Vcesat)
 HIGHT CURRENT CAPABILITY
 OFF LOSSES INCLUDE TAIL CURRENT
 HIGH VOLTAGE CLAMPING FEATURES


Application

 LIGHT DIMMER
 INRUSH CURRENT LIMITATION
 PRE-HEATING FOR ELECTRONIC LAMP BALLAST


Specifications

Symbol	Parameter	Value		Unit
VCES	Collector-Emitter Voltage (VGS = 0)	1200		V
VECR	Emitter-Collector Voltage	20		V
VGE	Gate-Emitter Voltage	± 20		V
IC	Collector Current (continuous) at Tc = 25 oC	10		A
IC	Collector Current (continuous) at Tc = 100 oC	5		A
ICM(•)	Collector Current (pulsed)	20		A
Ptot	Total Dissipation at Tc = 25 oC	55		W
	Derating Factor	0.44		W/oC
Eas (1)	Single Pulse Avalanche Energy at Tj = 25°C Single Pulse Avalanche Energy at Tj = 100°C	10 7		mJ mJ
Tstg	Storage Temperature	55 to 150		oC
Tj	Operating Junction Temperature	150		oC

Description

Using the latest high voltage technology based on a patented strip layout, STGD5NB120SZ-1 STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). The built in collector-gate zener exibits a very precise active clamping.