Features: HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)LOW ON-VOLTAGE DROP (Vcesat)HIGHT CURRENT CAPABILITYOFF LOSSES INCLUDE TAIL CURRENTHIGH VOLTAGE CLAMPING FEATURESApplicationLIGHT DIMMERINRUSH CURRENT LIMITATIONPRE-HEATING FOR ELECTRONIC LAMP BALLASTSpecifications Symbol Parameter Value ...
STGD5NB120SZ: Features: HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)LOW ON-VOLTAGE DROP (Vcesat)HIGHT CURRENT CAPABILITYOFF LOSSES INCLUDE TAIL CURRENTHIGH VOLTAGE CLAMPING FEATURESApplicationLIGHT DIMMERINRUSH CURRENT ...
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|
Symbol |
Parameter |
Value |
Unit | |
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
1200 |
V | |
|
VECR |
Emitter-Collector Voltage |
20 |
V | |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
10 |
A | |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
5 |
A | |
|
ICM(•) |
Collector Current (pulsed) |
20 |
A | |
|
Ptot |
Total Dissipation at Tc = 25 oC |
55 |
W | |
| Derating Factor |
0.44 |
W/oC | ||
|
Eas (1) |
Single Pulse Avalanche Energy at Tj = 25°C Single Pulse Avalanche Energy at Tj = 100°C |
10 |
mJ | |
|
Tstg |
Storage Temperature |
55 to 150 |
oC
| |
|
Tj |
Operating Junction Temperature |
150 |
oC | |
Using the latest high voltage technology based on a patented strip layout, STGD5NB120SZ STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). The built in collector-gate zener exibits a very precise active clamping.