Features: LOWER ON-VOLTAGE DROP (Vcesat)OFF LOSSES INCLUDE TAIL CURRENTLOSSES INCLUDE DIODE RECOVERY ENERGYLOWER CRES/CIES RATIOHIGH FREQUENCY OPERATIONVERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODENEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTIONApplicationHIGH FREQUENCY INVERTERSSMP...
STGD6NC60HD: Features: LOWER ON-VOLTAGE DROP (Vcesat)OFF LOSSES INCLUDE TAIL CURRENTLOSSES INCLUDE DIODE RECOVERY ENERGYLOWER CRES/CIES RATIOHIGH FREQUENCY OPERATIONVERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DI...
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|
Symbol |
Parameter |
Value |
Unit | |
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | |
|
VECR |
Emitter-Collector Voltage |
20 |
V | |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
10 |
A | |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
6 |
A | |
|
ICM(•) |
Collector Current (pulsed) |
24 |
A | |
|
IF |
Diode RMS Forward Current at TC = 25°C |
TBD |
A | |
|
Ptot |
Total Dissipation at Tc = 25 oC |
50 |
W | |
| Derating Factor |
0.40 |
W/oC | ||
|
Tstg |
Storage Temperature |
55 to 150
|
oC
| |
|
Tj |
Max.Operating Junction Temperature | |||
Using the latest high voltage technology based on a patented strip layout, STGD6NC60HD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.