STGD7NB60H

Packaging :
Collector- Emitter Voltage VCEO Max : 600 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.3 V
Package / Case : TO-252-3
Power Dissipation : 55 W
Continuous Collector Current at 25 C : 7 A


Application

 HIGH FREQUENCY MOTOR CONTROLS
 SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES


Specifications

Symbol	Parameter	Value		Unit
VCES	Collector-Emitter Voltage (VGS = 0)	600		V
VECR	Emitter-Collector Voltage	20		V
VGE	Gate-Emitter Voltage	± 20		V
IC	Collector Current (continuous) at Tc = 25 oC	14		A
IC	Collector Current (continuous) at Tc = 100 oC	7		A
ICM(•)	Collector Current (pulsed)	56		A
Ptot	Total Dissipation at Tc = 25 oC	55		W
	Derating Factor	0.44		W/oC
Tstg	Storage Temperature	65 to 150		oC
Tj	Max.Operating Junction Temperature	150		oC

Description

Using the latest high voltage technology based on a patented strip layout, STGD7NB60H STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding perfomances.

The STGD7NB60H suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.