Features: LOWER ON-VOLTAGE DROP (Vcesat)OFF LOSSES INCLUDE TAIL CURRENTLOWER CRES/CIES RATIOHIGH FREQUENCY OPERATION UP TO 70 KHzNEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTIONApplicationHIGH FREQUENCY INVERTERSSMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIESMOTOR DRIVERSSpecif...
STGD7NC60H: Features: LOWER ON-VOLTAGE DROP (Vcesat)OFF LOSSES INCLUDE TAIL CURRENTLOWER CRES/CIES RATIOHIGH FREQUENCY OPERATION UP TO 70 KHzNEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTIONApplicatio...
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|
Symbol |
Parameter |
Value |
Unit | |
|
TO-220 |
DPAK |
|||
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | |
|
VECR |
Emitter-Collector Voltage |
20 |
V | |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
|
IC |
Collector Current (continuous) at TC = 25°C (#) |
25 |
A | |
|
IC |
Collector Current (continuous) at TC = 100°C (#) |
14 |
A | |
|
ICM(•) |
Collector Current (pulsed) |
50 |
A | |
|
Ptot |
Total Dissipation at Tc = 25 oC |
80 |
70 |
W |
| Derating Factor |
0.64 |
0.56 |
W/oC | |
|
Tstg |
Storage Temperature |
55 to 150 |
oC | |
|
Tj |
Operating Junction Temperature |
oC | ||
Using the latest high voltage technology based on a patented strip layout, STGD7NC60H STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.