STGF14NC60KD

IGBT Transistors PowerMESH" IGBT

product image

STGF14NC60KD Picture
SeekIC No. : 00142314 Detail

STGF14NC60KD: IGBT Transistors PowerMESH" IGBT

floor Price/Ceiling Price

US $ .65~1 / Piece | Get Latest Price
Part Number:
STGF14NC60KD
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1
  • $.81
  • $.73
  • $.65
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/28

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2 V Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : 150 uA Maximum Operating Temperature : + 150 C
Package / Case : TO-220FP-3 Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2 V
Package / Case : TO-220FP-3
Gate-Emitter Leakage Current : 150 uA


Features:

LOWER ON-VOLTAGE DROP (Vcesat)
OFF LOSSES INCLUDE TAIL CURRENT
LOWER CRES / CIES RATIO
SWITCHING LOSSES INCLUDE DIODE RECOVERY ENERGY
VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE
NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRUBUTION



Application

HIGH FREQUENCY INVERTERS
SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
MOTOR DRIVERS



Specifications

Symbol Parameter Value Unit
    STGB14NC60KD
STGP14NC60KD
STGF14NC60KD  
VCES Collector-Emitter Voltage (VGS = 0) 600 V
VECR Emitter-Collector Voltage 20 V
VGE Gate-Emitter Voltage ±20 V
IC Collector Current (continuous) at TC = 25°(#) 25 11 A
IC Collector Current (continuous) at TC = 100 (#) 14 7 A
ICM ( *) Collector Current (pulsed) 50  A
IF Diode RMS Forward Current at TC = 25 20  A
PTOT Total Dissipation at TC = 25 80 25  W
  Derating Factor 0.64 0.20  W/
VISO Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25) -- 2500  V
Tstg Storage Temperature 55 to 150
Tj Operating Junction Temperature



Description

  Using the latest high voltage technology based on a patented strip layout, STGF14NC60KD STMicroelectronics has designed an advanced family of IGBTs, the Pow-erMESH(TM)  IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short cir-cuit withstand capability.




Parameters:

Technical/Catalog InformationSTGF14NC60KD
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)11A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 7A
Power - Max28W
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STGF14NC60KD
STGF14NC60KD
497 5115 5 ND
49751155ND
497-5115-5



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Boxes, Enclosures, Racks
Discrete Semiconductor Products
Prototyping Products
DE1
View more