IGBT Transistors PowerMESH" IGBT
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 2 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Gate-Emitter Leakage Current : | 150 uA | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-220FP-3 | Packaging : | Tube |
Symbol | Parameter | Value | Unit | |
STGB14NC60KD STGP14NC60KD |
STGF14NC60KD | |||
VCES | Collector-Emitter Voltage (VGS = 0) | 600 | V | |
VECR | Emitter-Collector Voltage | 20 | V | |
VGE | Gate-Emitter Voltage | ±20 | V | |
IC | Collector Current (continuous) at TC = 25°(#) | 25 | 11 | A |
IC | Collector Current (continuous) at TC = 100 (#) | 14 | 7 | A |
ICM ( *) | Collector Current (pulsed) | 50 | A | |
IF | Diode RMS Forward Current at TC = 25 | 20 | A | |
PTOT | Total Dissipation at TC = 25 | 80 | 25 | W |
Derating Factor | 0.64 | 0.20 | W/ | |
VISO | Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25) | -- | 2500 | V |
Tstg | Storage Temperature | 55 to 150 | ||
Tj | Operating Junction Temperature |
Using the latest high voltage technology based on a patented strip layout, STGF14NC60KD STMicroelectronics has designed an advanced family of IGBTs, the Pow-erMESH(TM) IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short cir-cuit withstand capability.
Technical/Catalog Information | STGF14NC60KD |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 11A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 7A |
Power - Max | 28W |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack (Straight Leads) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STGF14NC60KD STGF14NC60KD 497 5115 5 ND 49751155ND 497-5115-5 |