STGF7NB60SL

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Power Dissipation : 25 W
Gate-Emitter Leakage Current : +/- 100 nA
Package / Case : TO-220FP-3
Continuous Collector Current at 25 C : 15 A
Collector-Emitter Saturation Voltage : 1.2 V


Features:

 POLYSILICON GATE VOLTAGE DRIVEN
 LOW THRESHOLD VOLTAGE
 LOW ON-VOLTAGE DROP
 LOW GATE CHARGE
 HIGH CURRENT CAPABILITY


Application

 LIGHT DIMMER
 STATIC RELAYS


Specifications

Symbol	Parameter	Value		Unit
VCES	Collector-Emitter Voltage (VGS = 0)	600		V
VECR	Reverse Battery Protection	20		V
VGE	Gate-Emitter Voltage	± 20		V
IC	Collector Current (continuous) at Tc = 25 oC	15		A
IC	Collector Current (continuous) at Tc = 100 oC	7		A
ICM(1)	Collector Current (pulsed)	20		A
Ptot	Total Dissipation at Tc = 25	25		W
	Derating Factor	0.2		W/oC
VISO	Insulation Withstand Voltage A.C.	2500		V
Tstg	Storage Temperature	55 to 150		oC
Tj	.Operating Junction Temperature

Description

Using the latest high voltage technology based on a patented strip layout, STGF7NB60SL STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).