STGF7NC60HD

IGBT Transistors N-Ch 600 Volt 7 Amp

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SeekIC No. : 00142593 Detail

STGF7NC60HD: IGBT Transistors N-Ch 600 Volt 7 Amp

floor Price/Ceiling Price

US $ .61~.95 / Piece | Get Latest Price
Part Number:
STGF7NC60HD
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 100~250
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  • $.95
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  • Processing time
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Upload time: 2025/12/23

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.5 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 10 A Gate-Emitter Leakage Current : +/- 100 nA
Power Dissipation : 25 W Maximum Operating Temperature : + 150 C
Package / Case : TO-220FP-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Power Dissipation : 25 W
Gate-Emitter Leakage Current : +/- 100 nA
Collector-Emitter Saturation Voltage : 2.5 V
Package / Case : TO-220FP-3
Continuous Collector Current at 25 C : 10 A


Features:

 LOWER ON-VOLTAGE DROP (Vcesat)
 OFF LOSSES INCLUDE TAIL CURRENT
 LOSSES INCLUDE DIODE RECOVERY ENERGY
 LOWER CRES/CIES RATIO
 HIGH FREQUENCY OPERATION UP TO 70 KHz
 VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE
 NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION



Application

 HIGH FREQUENCY INVERTERS
 SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
 MOTOR DRIVERS



Specifications

Symbol
Parameter
Value
Unit
     STGP7NC60HD
STGB7NC60HD
 STGF7NC60HD  
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VECR
Emitter-Collector Voltage
20
V
VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at TC = 25°C (#)
25

 10

A
IC
Collector Current (continuous) at TC = 100°C (#)
14

 6

A
ICM(•)
Collector Current (pulsed)
50
A

IF

Diode RMS Forward Current at TC = 25°C

20

A

Ptot
Total Dissipation at Tc = 25 oC
80

 25

W
Derating Factor
0.64

0.20

W/oC

VISO

Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)
--

2500

V

Tstg
Storage Temperature

55 to 150

oC
Tj
Operating Junction Temperature
oC



Description

Using the latest high voltage technology based on a patented strip layout, STGF7NC60HD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.




Parameters:

Technical/Catalog InformationSTGF7NC60HD
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)10A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 7A
Power - Max25W
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STGF7NC60HD
STGF7NC60HD
497 4354 5 ND
49743545ND
497-4354-5



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