STGP10NB37LZ

Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Power Dissipation : 125 W
Continuous Collector Current at 25 C : 20 A
Collector-Emitter Saturation Voltage : 1.8 V
Package / Case : TO-220AB-3
Maximum Gate Emitter Voltage : 16 V
Collector- Emitter Voltage VCEO Max : 1.8 V
Gate-Emitter Leakage Current : +/- 700 uA


Features:

 POLYSILICON GATE VOLTAGE DRIVEN
 LOW THRESHOLD VOLTAGE
 LOW ON-VOLTAGE DROP
 LOW GATE CHARGE
 HIGH CURRENT CAPABILITY
 HIGH VOLTAGE CLAMPING FEATURE


Application

 AUTOMOTIVE IGNITION


Specifications

Symbol	Parameter	Value		Unit
VCES	Collector-Emitter Voltage (VGS = 0)	CLAMPED		V
VECR	Emitter-Collector Voltage	18		V
VGE	Gate-Emitter Voltage	CLAMPED		V
IC	Collector Current (continuous) at Tc = 25 oC	20		A
ICm	Collector Current (pulse width < 100ms)	60		A
Ptot	Total Dissipation at Tc = 25 oC	125		W
	Derating Factor	0.83		W/oC
ESD	ESD (Human Body Model)	4		KV
Tstg	Storage Temperature	65 to 175		oC
Tj	Max.Operating Junction Temperature	175		oC

Description

Using the latest high voltage technology based on a patented strip layout, STGP10NB37LZ STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.