STGW19NC60H

Configuration :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging : Tube


Features:

·Low on-voltage drop (V_CE(sat)  )
·High input impedance (voltage driven)


Application

·High frequency motor controls
·SMPS and PFC in both hard switch and
   resonant topologies


Specifications

Symbol	Parameter	Value		Unit
		TO-247	TO-220
VCES	Collector-emitter voltage (VGE = 0)	600		V
IC(1)	Collector current (continuous) at TC = 25	42	40	A
IC(1)	Collector current (continuous) at TC = 100	21	19	A
ICL(2)	Turn-off latching current	40		A
ICP(3)	Pulsed collector current	40		A
VGE	Gate-emitter voltage	±20		V
PTOT	Total dissipation at TC = 25	140	130	W
Tj	Operating junction temperature	-55 to 150

1.Calculated according to the iterative formula:
                                 T_JMAX-T_C
I_C(T_C)=--------------------
                     R _THJ-C*V_CESAT(MAX) (T_C*T_C)
2.Vclamp= 80%(V_CES ), T_j=150 , R _G =10 , V_GE =15 V
3.Pulse width limited by max. junction temperature allowed

Description

This STGW19NC60H IGBT utilizes the advanced PowerMESH^TMprocess resulting in an excellent trade-off  between switching erformance and low on-state behavior.