STH10NK60ZFI

Features:

·TYPICAL RDS(on) = 0.65 W
·EXTREMELY HIGH dv/dt CAPABILITY
·100% AVALANCHE TESTED
·GATE CHARGE MINIMIZED
·VERY LOW INTRINSIC CAPACITANCES
·VERY GOOD MANUFACTURING REPEATIBILITY


Application

·HIGH CURRENT, HIGH SPEED SWITCHING
·IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
·LIGHTING


Specifications

Symbol	Parameter	Value				Unit
		TO-220/ D2PAK/I2PAK	TO-220FP	ISOWATT218	TO-247
VDS	Drain-source Voltage (VGS = 0)	600				V
VDGR	Drain-gate Voltage (RGS = 20 k)	600				V
VGS	Gate- source Voltage	±30				V
ID	Drain Current (continuos) at TC = 25	10	10(*)	10(*)	10	A
ID	Drain Current (continuos) at TC = 100	5.7	5.7(*)	5.7(*)	5.7	A
IDM(1)	Drain Current (pulsed)	36	36(*)	36(*)	36	A
PTOT	Total Dissipation at TC = 25	115	35	35	156	W
	Derating Factor	0.92	0.28	0.28	1.25	W/
VESD(G-S)	Gate source ESD (HBM-C=100pF, R=1.5K)	4000				V
dv/dt(1)	Peak Diode Recovery voltage slope	4.5				V/ns
Viso	Insulation Withstand Voltage (DC)	-	2500	2000	-	V
TJ TSTG	Operating Junction Temperature Storage Temperature	-55 to150

(l ) Pulse width limited by safe operating area
(1) ISD 310A, di/dt 3200A/ms, VDD 3 V(BR)DSS, Tj 3 TJMAX.


Description

The STH10NK60ZFI SuperMESH] series is obtained through an extreme optimization of ST's well established stripbased PowerMESH] layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh] products.