STH51001Z

The features of STH51001Z are as follows: (1)designed for application in fiber-optic networks; (2)laser diode with multi-quantum well structure; (3)suitable for bit rate up to 1 Gbit/s; (4)ternary photodiode at rear mirror for monitoring and control of radiant power; (5)hermetically sealed subcomponent, similar to TO 18.

What comes next is about the maximum ratings of STH51001Z: (1)reverse voltage: 10V; (2)operating temperature range at case: -40 to +82; (3)storage temperature range: -40 to +82; (4)soldering temperature, tmax = 10s, 2mm distance from bottom edge of case: 260; (5)direct forward current: 120mA; (6)radiant power CW: 10mW; (7)reverse voltage: 2V.

The following is about the electrical characteristics of STH51001Z: (1)optical output power: 5mW; (2)emission wavelength center of range: 1280 to 1330nm; (3)spectral bandwidth: < 5nm; (4)threshold current: < 15 mA; (5)forward voltage: < 1.5V; (6)radiant power at threshold: < 50 W; (7)slope efficiency: > 100mW/A; (8)differential series resistance: < 8 ; (9)rise time/fall time: < 1ns; (10)dark current, VR = 5V, e = 0: < 500nA; (11)photocurrent, e = 2mW: 150 to 1500A. There is not much information about the product, if you want to get more information, please pay attention to our website and we will update it in time.