STI26NM60N, US $ 1.37-3.01, STI26NM60N DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003431022 Detail

STI26NM60N: MOSFET N-CH 600V 20A I2PAK

STI26NM60N Data Sheet

US $ 1.37~3.01 / Piece | Get Latest Price

Part Number:: STI26NM60N
Mfg:
Supply Ability:: 5000

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$2.68
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$1.98
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$1.5
$1.43
$1.37

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US $1.96 - 2.98 / Piece

MOSFET N-channel 650 V, 0.1 50 Ohm, 17 A MDmesh

Product Details

Quick Details

Series:	Mdmesh™ II	Manufacturer:	STMicroelectronics
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Gain :	19.5 dB	Current - Collector (Ic) (Max):	-
FET Feature:	Standard	Drain to Source Voltage (Vdss):	600V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	20A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	165 mOhm @ 10A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	4V @ 250µA	Gate Charge (Qg) @ Vgs:	60nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	1800pF @ 50V
Power - Max:	140W	Mounting Type:	Through Hole
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA	Supplier Device Package:	I2PAK

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 20A
Drain to Source Voltage (Vdss): 600V
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 60nC @ 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Power - Max: 140W
Manufacturer: STMicroelectronics
Series: Mdmesh™ II
Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds: 1800pF @ 50V

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STI26NM60N

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