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STK630F

Features: • Avalanche rugged technology.• Low input capacitance.• Low leakage current : 10 ㎂ (Max.) @ VDS=200V.• Low RDS(on) : 0.30(Typ.)Specifications Characteristic Symbol Rating Unit Drain-source voltage VDSS 200 V Gate-source voltage ...

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SeekIC No. : 004507960 Detail

STK630F: Features: • Avalanche rugged technology.• Low input capacitance.• Low leakage current : 10 ㎂ (Max.) @ VDS=200V.• Low RDS(on) : 0.30(Typ.)Specifications Characteri...

STK630F Data Sheet

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Part Number:
STK630F
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Avalanche rugged technology.
• Low input capacitance.
• Low leakage current : 10 ㎂ (Max.) @ VDS=200V.
• Low RDS(on) : 0.30(Typ.)


Specifications

Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
200
V
Gate-source voltage
VGSS
±30
V
Drain current (DC) *
ID
TC=25
9
A
TC=100
5.7
Drain current (Pulsed) *
IDP
36
A
Drain power dissipation (TC=25)
PD
30
W
Single pulsed avalanche energy
EAS
162
mJ
Avalanche current (Repetitive)
IAR
9
A
Repetitive avalanche energy
EAR
7.2
mJ
Peak diode recovery dv/dt
dv/dt
5.0
V/㎱
Junction temperature
TJ
150
°C
Storage temperature range
Tstg
-55~150
°C
* Limited by maximum junction temperature


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