Features: Power MOSFET devices Feedback control for high output voltage precisionDriver circuit on-chipOvercurrent protection circuit on-chipPin compatible with all other devices in the same series of devices with 110 to 280W power ratingsHigher oscillator frequency allows the use of smaller pulse...
STK73902: Features: Power MOSFET devices Feedback control for high output voltage precisionDriver circuit on-chipOvercurrent protection circuit on-chipPin compatible with all other devices in the same series ...
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| Parameter | Symbol | Conditions | Ratings | UNIT |
| Operating substrate temperature | TC max | Recommended value is 105 | 115 | |
| AC input voltage | VAC | Specified test circuit | 140 | Vrms |
| Operating temperature | Topr | -10 to+85 | ||
| Storage temperature | Tstg | -30 to+115 | ||
| Maximum output power | Wo max | Specified test circuit VO=135V | 180 | W |
| (TR1) | ||||
| Drain current | ID | 10 | A | |
| Pulse drain current | ID(Pulse) | 35 | A | |
| Pulse drain current | IDR | 10 | A | |
| Gate-source voltage | VGSS | ±30 | V | |
| Allowable power dissipation | PD | 100 | W | |
| Chip junction temperature | Tj max | 150 | ||
| (ZD1) | ||||
| Allowable power dissipation | PZD1 | 500 | mW | |
| Chip junction temperature | Tj(ZD1)max | 125 | ||