STL100NH3LL

MOSFET STRIPFET III

product image

STL100NH3LL Picture
SeekIC No. : 00160631 Detail

STL100NH3LL: MOSFET STRIPFET III

floor Price/Ceiling Price

Part Number:
STL100NH3LL
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/26

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 0.0035 Ohms Configuration : Single Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : PowerFLAT Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 100 A
Configuration : Single Triple Source
Gate-Source Breakdown Voltage : +/- 16 V
Package / Case : PowerFLAT
Resistance Drain-Source RDS (on) : 0.0035 Ohms


Features:

 `TYPICAL R DS(on) = 0.0032 @ 10V
 `IMPROVED DIE-TO-FOOTPRINT RATIO
 `VERY LOW PROFILE PACKAGE (1mm MAX)
 `VERY LOW THERMAL RESISTANCE
 `CONDUCTION LOSSES REDUCED
 `SWITCHING LOSSES REDUCED



Application

 ·HIGH-EFFICIENCY DC-DC CONVERTERS
 ·SYNCHRONOUS RECTIFICATION



Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VGS
Gate- source Voltage
±16
V
I D (2)
Drain Current (continuous) at TC = 25°C
100
A
ID
Drain Current (continuous) at TC = 100°C
15.6
A
I DM (3)
Drain Current (pulsed)
100
A
I D (1)
Drain Current (continuous) at TC = 25°C
25
A
P TOT (2)
Total Dissipation at TC = 25°C
80
W
P TOT (1)
Total Dissipation at TC = 25°C
4
W
Derating Factor
0.03
W/°C
T stg
Tj
Storage TemperatureOperating Junction Temperature Range
-55 to 150
°C

DiodeNote:(1)The value is according R thj-pcb (2)The value is according R thj-c(3) Pulse width limited by safe operating area.(4) When mounted on FR-4 board of 1 in2 , 2oz Cu, t < 10 sec(5) Pulsed: Pulse duration = 300s, duty cycle  .5%




Description

The STL100NH3LL utilizes the latest advanced design rules of ST's proprietary STripFET™ Technology. This process complete to unique metallization technique realised the most advanced low voltage MOSFET in PowerFLAT(6x5). The Chip-scaled PowerFLAT™ package allows a significant board space saving, still boosting the performance.




Parameters:

Technical/Catalog InformationSTL100NH3LL
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs3.5 mOhm @ 12.5A, 10V
Input Capacitance (Ciss) @ Vds 4450pF @ 25V
Power - Max4W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs40nC @ 4.5V
Package / CasePowerFlat? (6 x 5)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STL100NH3LL
STL100NH3LL
497 5813 6 ND
49758136ND
497-5813-6



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Boxes, Enclosures, Racks
Prototyping Products
DE1
Circuit Protection
Static Control, ESD, Clean Room Products
Potentiometers, Variable Resistors
Hardware, Fasteners, Accessories
View more