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STL22NF10

Features: TYPICAL RDS(on) = 0.055 WIMPROVED DIE-TO-FOOTPRINT RATIOVERY LOW PROFILE PACKAGE (1mm MAX)VERY LOW THERMAL RESISTANCEVERY LOW GATE CHARGEApplicationHIGH-EFFICIENCY ISOLATED DC-DCCONVERTERS TELECOM AND AUTOMOTIVESpecifications Symbol Parameter Value Unit VDS Drain-source Volt...

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SeekIC No. : 004508036 Detail

STL22NF10: Features: TYPICAL RDS(on) = 0.055 WIMPROVED DIE-TO-FOOTPRINT RATIOVERY LOW PROFILE PACKAGE (1mm MAX)VERY LOW THERMAL RESISTANCEVERY LOW GATE CHARGEApplicationHIGH-EFFICIENCY ISOLATED DC-DCCONVERTERS...

STL22NF10 Data Sheet

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Part Number:
STL22NF10
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.055 W
 IMPROVED DIE-TO-FOOTPRINT RATIO
 VERY LOW PROFILE PACKAGE (1mm MAX)
 VERY LOW THERMAL RESISTANCE
 VERY LOW GATE CHARGE


Application

 HIGH-EFFICIENCY ISOLATED DC-DC
CONVERTERS
TELECOM AND AUTOMOTIVE


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 100 V
VDGR Drain-gate Voltage (RGS = 20 k ) 100 V
VGS Gate- source Voltage ± 20 V
ID(2) Drain Current (continuos) at TC = 25(Steady State)
 5.3
 A
ID(2) Drain Current (continuos) at TC = 100 3.8 A
IDM(3) Drain Current (pulsed) 22 A
PTOT(2) Total Dissipation at TC = 25(Steady State) 4 W
Ptot(1) Total Dissipation at TC = 25 70 W
  Derating Factor 0.03 W/
dv/dt(5) Peak Diode Recovery voltage slope 16 V/ns
EAS(6) Single Pulse Avalanche Energy 82 mJ
Tstg Storage Temperature 55 to 150
Tj Operating Junction Temperature



Description

This STL22NF10 specific Power MOSFET is the second eneration of STMicroelectronis unique "STripFET™"technology. The resulting transistor shows extremely lowon-resistance and minimal gate charge. The newPowerFLAT™ package allows a significant reduction inboard space without compromising performance.




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