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STL35NF10

Features: TYPICAL RDS(on) = 0.025W IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGEApplicationHIGH EFFICIENCY ISOLATED DC/DCCONVETERSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain-gate Voltage (RGS = 20 k ) 100 V V...

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SeekIC No. : 004508066 Detail

STL35NF10: Features: TYPICAL RDS(on) = 0.025W IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGEApplicationHIGH EFFICIENCY ISOLATED DC/DCCONVETERSSpecifications Symbol Parameter Value Unit ...

STL35NF10 Data Sheet

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Part Number:
STL35NF10
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

TYPICAL RDS(on) = 0.025W
IMPROVED DIE-TO-FOOTPRINT RATIO
VERY LOW PROFILE PACKAGE


Application

 HIGH EFFICIENCY ISOLATED DC/DCCONVETERS


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 100 V
VDGR Drain-gate Voltage (RGS = 20 k ) 100 V
VGS Gate- source Voltage ± 20 V
ID Drain Current (continuos) at TC = 25
Drain Current (continuos) at TC = 100		 35
22		 A
A
IDM (l) Drain Current (pulsed) 140 A
PTOT Total Dissipation at TC = 25 80 W
  Derating Factor 0.64 W/°C
EAS(1) Single Pulse Avalanche Energy 135 mJ
Tstg Storage Temperature 65 to 150 °C
Tj Max. Operating Junction Temperature 55 to 150 °C



Description

This Power MOSFET STL35NF10 is the second generation of TMicroelectronics unique "STripFET™" technology.The resulting transistor shows extremely low onresistanceand minimal gate charge. The new PowerFLAT™ package allows a significant reduction inboard space without compromising performance.




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