STL6NK55Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 1.4 Ohms
Drain-Source Breakdown Voltage : 550 V
Continuous Drain Current : 0.86 A
Package / Case : PowerFLAT


Features:

 TYPICAL RDS(on) = 1.2
 EXTREMELY HIGH dv/dt CAPABILITY
 IMPROVED ESD CAPABILITY
 100% AVALANCHE RATED
 GATE CHARGE MINIMIZED
 VERY LOW INTRINSIC CAPACITANCES
 VERY GOOD MANUFACTURING REPEATIBILITY


Application

 LIGHTING
IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PFC


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	550	V
VDGR	Drain-gate Voltage (RGS = 20 k )	550	V
VGS	Gate- source Voltage	± 30	V
ID(2)	Drain Current (continuos) at TC = 25(Steady State) Drain Current (continuos) at TC = 100	0.86 0.54	A A
IDM(2)	Drain Current (pulsed)	3.44	A
PTOT(2)	Total Dissipation at TC = 25(Steady State)	2.5	W
Ptot(1)	Total Dissipation at TC = 25(Steady State)	75	W
	Derating Factor(2)	0.02	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	3000	V/ns
dv/dt(4)	Peak Diode Recovery voltage slope	4.5	V/ns
Tstg	Storage Temperature	55 to 150
Tj	Operating Junction Temperature

Description

The STL6NK55Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.