STL8NH3LL

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 8 A
Package / Case : PowerFLAT
Resistance Drain-Source RDS (on) : 0.015 Ohms
Gate-Source Breakdown Voltage : +/- 18 V


Features:

 TYPICAL RDS(on) = 0.012 @ 10V
 IMPROVED DIE-TO-FOOTPRINT RATIO
 VERY LOW PROFILE PACKAGE (1mm MAX)
 VERY LOW THERMAL RESISTANCE
 VERY LOW GATE CHARGE
 LOW THRESHOLD DEVICE


Application

 CONTROL FET IN BUCK CONVERTER


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain-gate Voltage (RGS = 20 k )	30	V
VGS	Gate- source Voltage	± 16	V
ID(2)	Drain Current (continuos) at TC = 25(Steady State)	8	A
ID(2)	Drain Current (continuos) at TC = 100(Steady State)	5	A
IDM(3)	Drain Current (pulsed)	32	A
PTOT(2)	Total Dissipation at TC = 25(Steady State)	50	W
Ptot(1)	Total Dissipation at TC = 25	1.56	W
	Derating Factor(2)	0.4	W/
Tstg	Storage Temperature	55 to 150
Tj	Operating Junction Temperature

Description

This application specific MOSFET STL8NH3LL is the lastest generation of STMicroelectronics unique "STripFET™" technology. The resulting transistor is optimized for low on-resistance and minimal gate charge. The Chip-scaled PowerFLAT™ package allows a significant board space saving, still boosting the performance.

Parameters:

Technical/Catalog Information	STL8NH3LL
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	15 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	965pF @ 25V
Power - Max	2W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	12nC @ 4.5V
Package / Case	PowerFlat? (3.3 x 3.3)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STL8NH3LL STL8NH3LL 497 4115 6 ND 49741156ND 497-4115-6