Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: SMD/SMT
Packaging
: Reel
Maximum Operating Temperature
: + 150 C
Gate-Source Breakdown Voltage
: +/- 30 V
Continuous Drain Current
: 9 A
Resistance Drain-Source RDS (on)
: 0.4 Ohms
Drain-Source Breakdown Voltage
: 300 V
Package / Case
: PowerFLAT
Features: TYPICAL RDS(on) = 0.36
EXTREMELY HIGH dv/dt CAPABILITY
IMPROVED ESD CAPABILITY
100% AVALANCHE RATED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING REPEATIBILITY
Application LIGHTING
IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PFCSpecifications
| Symbol |
Parameter |
Value |
Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
300 |
V |
| VDGR |
Drain-gate Voltage (RGS = 20 k ) |
300 |
V |
| VGS |
Gate- source Voltage |
± 30 |
V |
| ID(2) |
Drain Current (continuos) at TC = 25(Steady State)
Drain Current (continuos) at TC = 100 |
9
5.6 |
A
A |
| IDM(2) |
Drain Current (pulsed) |
36 |
A |
| PTOT(2) |
Total Dissipation at TC = 25(Steady State) |
2.5 |
W |
| Ptot(1) |
Total Dissipation at TC = 25 |
75 |
W |
| |
Derating Factor |
0.6 |
W/ |
| VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5K) |
3000 |
V/ns |
| dv/dt(5) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
| Tstg |
Storage Temperature |
55 to 150 |
|
| Tj |
Operating Junction Temperature |
DescriptionThe STL9NK30Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
STL9NK30Z Data Sheet
