STM4439

The STM4439 is designed as P-channel enhancement mode MOSFET. Its Vdss is -30V and its Id is -15A. Its Rds(on) (m) max would be 8.5m at Vgs=-10V and 12m at Vgs=-4.5V.

STM4439 has three features. The first one is super high dense cell design for low Rds(on). The second one is rugged and reliable. The third one is surface mount package. That are all the main features.

Some absolute maximum ratings of STM4439 (Ta=25°C unless otherwise noted) have been concluded into several points as follow. Its drain to source voltage which would be -30V. Its gate to source voltage would be +/-25V. Its drain current continuous at Tj=25°C would be -15A and it would be -75A for pulsed. Its drain to source diode forward current would be -1.7A. Its maximum power dissipation would be 2.5W. Its operating junction and storage temperature range would be from -55°C to 150°C. Its thermal resistace, junction to ambient would be 50°C/W.

Also some electrical STM4439 characteristics (Ta=25°C unless otherwise noted) about it. For its OFF characteristics its drain to source breakdown voltage would be -30V with condition of Vgs=0V and Id=-250uA. Its zero gate voltage drain current would be max -1uA with condition of Vds=-24V and Vgs=0V. Its gate-body leakage would be max +/-100nA with condition of Vgs=+/-25V and Vds=0V. For its ON characteristics its gate threshold voltage would be -1.4V and max -2.6V with condition of Vds=Vgs and Id=-250uA. Its drain to source on-state resistance would be max 8.5mohm with condition of Vgs=-10V and Id=-12A and it would be max 12mohm with condition of Vgs=-4.5V and Id=-10A. Its on-state drain current would be min -10A with condition of Vds=-5V and Vgs=-10V. Its forward transconductance would be typ 15S with condition of Vds=-5V and Id=-10A. And so on. If you have any question or suggestion or want know more information about STM4439 please contact us for details. Thank you!