STM4470

The STM4470 is designed as N-channel enhancement mode field effect transistor. Its Vdss is 40V and its Id is 10A. Its Rds(on) (m) max would be 10m at Vgs=10V and 13m at Vgs=4.5V.

STM4470 has three features. The first one is super high dense cell design for low Rds(on). The second one is rugged and reliable. The third one is surface mount package. That are all the main features.

Some STM4470 absolute maximum ratings (Ta=25°C unless otherwise noted) have been concluded into several points as follow. Its drain to source voltage which would be 40V. Its gate to source voltage would be +/-20V. Its drain current continuous at Tj=25°C would be 10A and it would be 39A for pulsed. Its drain to source diode forward current would be 1.7A. Its maximum power dissipation would be 2.5W. Its operating junction and storage temperature range would be from -55°C to 150°C. Its thermal resistace, junction to ambient would be 50°C/W.

Also some STM4470 electrical characteristics (Ta=25°C unless otherwise noted) about it. For its OFF characteristics its drain to source breakdown voltage would be min 40V with condition of Vgs=0V and Id=250uA. Its zero gate voltage drain current would be max 1uA with condition of Vds=32V and Vgs=0V. Its gate-body leakage would be max +/-100uA with condition of Vgs=+/-20V and Vds=0V. For ON characteristics its gate threshold voltage would be min 1V and typ 1.7V and max 3V with condition of Vds=Vgs and Id=250uA. STM4470's drain to source on-state resistance would be typ 8mohm and max 10mohm with condition of Vgs=10V and Id=10A and it would be typ 11mohm and max 13mohm with condition of Vgs=4.5V and Id=6A. Its forward transconductance would be typ 20S with condition of Vds=10V and Id=10A. And so on. If you have any question or suggestion or want know more information please contact us for details. Thank you!