Features: · Super high dense cell design for low RDS (ON).· Rugged and reliable.· Surface Mount Package.· ESD Protected.PinoutSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Drain Current-Continuousa @T...
STM4470E: Features: · Super high dense cell design for low RDS (ON).· Rugged and reliable.· Surface Mount Package.· ESD Protected.PinoutSpecifications Parameter Symbol Limit Unit Drain-Source...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

| Parameter |
Symbol |
Limit |
Unit |
| Drain-Source Voltage |
VDS |
40 |
V |
| Gate-Source Voltage |
VGS |
±20 |
V |
| Drain Current-Continuousa @TJ=25 -Pulsedb |
ID |
9.5 |
A |
|
IDM |
39 |
A | |
| Drain-Source Diode Forward Currenta |
IS |
1.7 |
A |
| Maximum Power Dissipationa |
PD |
2.5 |
W |
| Operating Junction and S torage Temperature Range |
TJ,TSTG |
-55 to 150 |