Features: ·Surface Mount P ackage.·Super high dense cell design for low R DS (ON).·Rugged and reliable.·ESD Protected.PinoutSpecifications Parameter Symbol Maximum Units Gate-Source VoltageDrain-Source Voltage VDSVGS 40±20 V Drain Current-Continuousa @ Ta 25 ID 7 A 70 5.9 ...
STM4472: Features: ·Surface Mount P ackage.·Super high dense cell design for low R DS (ON).·Rugged and reliable.·ESD Protected.PinoutSpecifications Parameter Symbol Maximum Units Gate-Source Volta...
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| Parameter | Symbol | Maximum | Units | |
| Gate-Source Voltage Drain-Source Voltage |
VDS VGS |
40 ±20 |
V | |
| Drain Current-Continuousa @ Ta | 25 | ID | 7 | A |
| 70 | 5.9 | |||
| -Pulsed b Drain-S ource Diode Forward Current a |
IDM IS |
28 1.7 |
A | |
| Power Dissipation | TA=25 | PD | 3 | W |
| TA=70 | 2.1 | |||
| Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | ||