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STM4884A

Features: Super high dense cell design for low RDS (ON).Rugged and reliable.Surface Mount Package.PinoutSpecifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS 30 V Gate-S ource Voltage VGS 20 V Drain Current-Continuousa @ TJ=25 -Pulsedb ID 12 A IDM 4...

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SeekIC No. : 004508174 Detail

STM4884A: Features: Super high dense cell design for low RDS (ON).Rugged and reliable.Surface Mount Package.PinoutSpecifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS 30 V ...

STM4884A Data Sheet

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Part Number:
STM4884A
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

Super high dense cell design for low RDS (ON).
Rugged and reliable.
Surface Mount Package.




Pinout

Connection Diagram




Specifications

Parameter Symbol Limit Unit
Drain-S ource Voltage VDS 30 V
Gate-S ource Voltage VGS 20 V
Drain Current-Continuousa @ TJ=25 -Pulsedb ID 12 A
IDM 44 A
Drain-S ource Diode Forward Currenta IS 1.7 A
Maximum Power Dissipationa PD 2.5 W
Operating Junction and S torage
Temperature R ange		 TJ , TSTG -55 to 150 G





Description

The features of STM4884A: (1)super high dense cell design for low RDS(on); (2)rugged and reliable; (3)suface mount package.

The absolute maximum ratings of the STM4884A are: (1)drain-source voltage: 30V; (2)gate-source voltage: ±20V; (3)drain current-continuous: 12A; (4)drain-source diode forward current: 1.7A; (5)maximum power dissipation: 2.5W; (6)operating junction and storage: -55 to 150; (7)temperature range: -55 to 150.

The following is about the maximum ratings of STM4884A: (1)Drain-Source Breakdown Voltage: 30V at VGS = 0V, ID = 250uA; (2)Zero Gate Voltage Drain Current: 1 uA at VDS = 24V, VGS = 0V; (3)Gate-Body Leakage: ±100 nA at VGS = ±20V, VDS = 0V; (4)Gate Threshold Voltage: 1V min, 1.6V typical and 3V max at VDS = VGS , ID = 250uA; (5)Drain-Source On-State Resistance: 6mobm at VGS 10V, ID 12A; (6)On-State Drain Current: 20A min at VDS = 10V, VGS = 10V; (7)Forward Transconductance: 22S at VDS 15V, ID=12A.






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