Features: ·Super high dense cell design for low RDS(ON).·Rugged and reliable.·Suface Mount Package.PinoutSpecifications Symbol Parameter Limit Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous a TA=25°C 17 A IDM -Pulsed b ...
STM4886: Features: ·Super high dense cell design for low RDS(ON).·Rugged and reliable.·Suface Mount Package.PinoutSpecifications Symbol Parameter Limit Units VDS Drain-Source Voltage 30 V VG...
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| Symbol | Parameter | Limit | Units | |
| VDS | Drain-Source Voltage | 30 | V | |
| VGS | Gate-Source Voltage | ±20 | V | |
| ID | Drain Current-Continuous a | TA=25°C | 17 | A |
| IDM | -Pulsed b | 68 | A | |
| EAS | Sigle Pulse Avalanche Energy d | 181 | mJ | |
| PD | Maximum Power Dissipation a | TA=25°C | 2.5 | W |
| TJ, TSTG | Operating Junction and Storage Temperature Range |
-55 to 150 | °C | |