STM8601

The STM8601(Dual Enhancement Mode Field Effect Transistor ( N and P Channel )) For PRODUCT SUMMARY (N-Channel), VDSS=60V, ID=4.5A, RDS(ON) (mΩ) Max=58( @ VGS=10V)/75 (@ VGS=4.5V). For PRODUCT SUMMARY (P-Channel), VDSS=-60V, ID=-3.3A, RDS(ON) (mΩ) Max=105 (@ VGS=-10V)/150 (@ VGS=-4.5V).
Absolute maximum ratings got @ TA=25°C unless otherwise noted, VDS(Drain-Source Voltage)=60V(N-Channel)/-60V(P-Channel), VGS(Gate-Source Voltage)=±20(N-Channel)/±20V(P-Channel), IDM(-Pulsed)(b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.)=16A(N-Channel)/12A(P-Channel), PD(Maximum Power Dissipation(a.Surface Mounted on FR4 Board,t < 10sec.))=2.0W(TA=25°C)/1.28W(TA=70°C), TJ, TSTG(Operating Junction and Storage Temperature Range)=-55 to 150°C.Thermal characteristics of STM8601 are RJA(Thermal Resistance, Junction-to-Ambient( a.Surface Mounted on FR4 Board,t < 10sec.))=62.5°C/W.
Electical of N-Channel STM8601 are got @ TA=25°C unless otherwise noted, BVDSS(Drain-Source Breakdown Voltage, VGS=0V , ID=250uA)=60(min)V, IDSS(Zero Gate Voltage Drain Current, VDS=48V , VGS=0V)=1(max)uA, IGSS(Gate-Body Leakage Current, VGS= ±20V , VDS=0V)=±100nA. And for P-Channel, BVDSS(Drain-Source Breakdown Voltage, VGS=0V , ID=250uA)=-60(min)V, IDSS(Zero Gate Voltage Drain Current, VDS=48V , VGS=0V)=-1(max)uA, IGSS(Gate-Body Leakage Current, VGS= ±20V , VDS=0V)=±100nA.