STN1NB80

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : SOT-223
Drain-Source Breakdown Voltage : 800 V
Continuous Drain Current : 0.2 A
Resistance Drain-Source RDS (on) : 20 Ohms


Features:

 TYPICAL R_DS(on) = 16  
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED


Application

 SWITCH MODE POWER SUPPLIES(SMPS)
AC ADAPTORS AND BATTERY CHARGERS FOR HANDHELD EQUIPMENT


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	800	V
VDGR	Drain-gate Voltage (RGS = 20 k )	800	V
VGS	Gate- source Voltage	± 30	V
ID	Drain Current (continuos) at TC = 25	0.2	A
ID	Drain Current (continuos) at TC = 100	0.12	A
IDM()	Drain Current (pulsed)	0.8	A
PTOT	Total Dissipation at TC = 25	2.9	W
	Derating Factor	0.02	W/
dv/dt (1)	Peak Diode Recovery voltage slope	4	V/ns
Tstg	Storage Temperature	65 to 150
Tj	Max. Operating Junction Temperature	150

(`) Pulse width limited by safe operating area (1) I_SD  12 A, di/dt 200 A/s, V_DD V_(BR)DSS, T_j T_JMAX

 

Description

Using the latest high voltage STN1NB80 MESH OVERLAY^TM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.