STN1NC60

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 15 Ohms
Package / Case : SOT-223
Configuration : Single Dual Drain
Continuous Drain Current : 0.3 A


Features:

TYPICAL RDS(on) = 12
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED


Application

 AC ADAPTORS AND BATTERY CHARGERS
SWITH MODE POWER SUPPLIES (SMPS)


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	600	V
VDGR	Drain-gate Voltage (RGS = 20 k )	600	V
VGS	Gate- source Voltage	± 30	V
ID	Drain Current (continuos) at TC = 25	0.3	A
ID	Drain Current (continuos) at TC = 100	0.18	A
IDM()	Drain Current (pulsed)	1.2	A
PTOT	Total Dissipation at TC = 25	2.5	W
	Derating Factor	0.02	W/
dv/dt (1)	Peak Diode Recovery voltage slope	3	V/ns
Tstg	Storage Temperature	65 to 150
Tj	Max. Operating Junction Temperature	150

(•)Pulse width limited by safe operating area (1)I_SD  12 A, di/dt 200 A/s, V_DD V(BR)DSS, T_j T_JMAX

Description

The STN1NC60 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.