STN1NF10

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Package / Case : SOT-223
Configuration : Single Dual Drain
Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 0.8 Ohms


Features:

TYPICAL RDS(on) = 0.7
EXCEPTIONAL dv/dt CAPABILITY


Application

 DC-DC CONVERTERS
DC MOTOR CONTROL (DISK DRIVERS, etc.)


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	100	V
VDGR	Drain-gate Voltage (RGS = 20 k )	100	V
VGS	Gate- source Voltage	± 20	V
ID	Drain Current (continuos) at TC = 25	1	A
ID	Drain Current (continuos) at TC = 100	0.6	A
IDM()	Drain Current (pulsed)	4	A
PTOT	Total Dissipation at TC = 25	2.5	W
	Derating Factor	0.02	W/
dv/dt (1)	Peak Diode Recovery voltage slope	20	V/ns
EAS(2)	Single Pulse Avalanche Energy	35	mJ
Tstg	Storage Temperature	55to 150
Tj	Max. Operating Junction Temperature	55to 150

(`) Pulse width limited by safe operating area. (1) I_SD1A, di/dt350A/s, V_DD  V_(BR)DSS, T_j T_JMAX (2) Starting T_j = 25 , I_D = 1A, V_DD = 70V

Description

This Power MOSFET STN1NF10 is the latest development of STMicroelectronis unique "Single Feature Size™"strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.