STN2NE06

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.25 Ohms
Package / Case : SOT-223
Configuration : Single Dual Drain
Continuous Drain Current : 2 A


Features:

TYPICAL RDS(on) = 0.18  
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHERUGGED TECHNOLOGY
100% AVALANCHE TESTED
APPLICATIONORIENTED CHARACTERIZATION


Application

 DC MOTOR CONTROL (DISK DRIVES,etc.)
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	60	V
VDGR	Drain-gate Voltage (RGS = 20 k )	60	V
VGS	Gate- source Voltage	± 20	V
ID	Drain Current (continuos) at TC = 25	2	A
ID	Drain Current (continuos) at TC = 100	1.3	A
IDM()	Drain Current (pulsed)	8	A
PTOT	Total Dissipation at TC = 25	2.5	W
	Derating Factor	0.02	W/
dv/dt (1)	Peak Diode Recovery voltage slope	6	V/ns
Tstg	Storage Temperature	65 to 150
Tj	Max. Operating Junction Temperature	150

(•) Pulse width limited by safe operating area (1) I_SD 8A, di/dt 200A/s, V_DD V_(BR)DSS, T_j T_JMAX


Description

This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size]" stip-based process. The resulting transistor STN2NE06 shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.