STN2NE10

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Package / Case : SOT-223
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 0.4 Ohms
Continuous Drain Current : 2 A


Features:

 TYPICAL R_DS(on) = 0.33
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE RUGGED TECHNOLOGY
 100 % AVALANCHE TESTED
APPLICATION ORIENTED CHARACTERIZATION


Application

DC MOTOR CONTROL (DISK DRIVES,etc.)
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	100	V
VDGR	Drain-gate Voltage (RGS = 20 k )	100	V
VGS	Gate- source Voltage	± 20	V
ID	Drain Current (continuos) at TC = 25	2	A
ID	Drain Current (continuos) at TC = 100	1.3	A
IDM()	Drain Current (pulsed)	8	A
PTOT	Total Dissipation at TC = 25	2.5	W
	Derating Factor	0.02	W/
dv/dt(1)	Peak Diode Recovery voltage slope	6	mJ
Tstg	Storage Temperature	65 to 150
Tj	Max. Operating Junction Temperature	150

Description

This Power Mosfet is the latest development of STN2NE10 STMicroelectronics unique "Single Feature SizeÔ " stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.