Position: Home  > All Categories> Integrated Circuits (ICs) > STN2NF06

STN2NF06

Features: TYPICAL RDS(on) = 0.12 EXCEPTIONAL dv/dt CAPABILITY AVALANCHERUGGED TECHNOLOGY 100 % AVALANCHETESTED APPLICATION ORIENTED CHARACTERIZATIONApplicationDC MOTOR CONTROL (DISK DRIVES,etc.)DC-DC & DC-AC CONVERTERSSYNCHRONOUS RECTIFICATIONSpecifications Symbol Parameter Value Un...

product image

STN2NF06 Picture
See larger image
SeekIC No. : 004508289 Detail

STN2NF06: Features: TYPICAL RDS(on) = 0.12 EXCEPTIONAL dv/dt CAPABILITY AVALANCHERUGGED TECHNOLOGY 100 % AVALANCHETESTED APPLICATION ORIENTED CHARACTERIZATIONApplicationDC MOTOR CONTROL (DISK DRIVES,etc.)DC...

STN2NF06 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STN2NF06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

 TYPICAL RDS(on) = 0.12
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHERUGGED TECHNOLOGY
100 % AVALANCHETESTED
APPLICATION ORIENTED CHARACTERIZATION


Application

 DC MOTOR CONTROL (DISK DRIVES,etc.)
 DC-DC & DC-AC CONVERTERS
 SYNCHRONOUS RECTIFICATION


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 k ) 60 V
VGS Gate- source Voltage ± 20 V
ID Drain Current (continuos) at TC = 25
 2 A
ID Drain Current (continuos) at TC = 100 1.8 A
IDM() Drain Current (pulsed) 8 A
PTOT Total Dissipation at TC = 25 2.5 W
Derating Factor 0.02 W/
dv/dt (1) Peak Diode Recovery voltage slope 6 V/ns
Tstg Storage Temperature 65 to 150
Tj Max. Operating Junction Temperature 150

(`) Pulse width limited by safe operating area (1) ISD 12 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX New RDS (on) spec. starting from JULY 98




Description

This Power Mosfet is the latest development of STN2NF06 STMicroelectronics unique "Single Feature Size]" stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche  haracteristics
and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Transformers
TM-09210
BV222-1-00992
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Audio Products
HUC1002
WM-64CT
Prototyping Products
AVT4168
DE1
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
View more