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STN2NF06L

Features: TYPICAL RDS(on) = 0.1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY LOW THRESHOLD DRIVEApplicationDC MOTOR CONTROL (DISK DRIVES, etc.) DC-DC & DC-AC CONVERTERS SYNCHRONOUS RECTIFICATIONSpecifications Symbol Parameter Value Unit VDS D...

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STN2NF06L: Features: TYPICAL RDS(on) = 0.1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY LOW THRESHOLD DRIVEApplicationDC MOTOR CONTROL (DISK DRIVES, etc.) DC-DC & DC-...

STN2NF06L Data Sheet

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Part Number:
STN2NF06L
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.1
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
AVALANCHE RUGGED TECHNOLOGY
LOW THRESHOLD DRIVE


Application

 DC MOTOR CONTROL (DISK DRIVES, etc.)
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 k ) 60 V
VGS Gate- source Voltage ± 16 V
ID Drain Current (continuos) at TC = 25
 2 A
ID Drain Current (continuos) at TC = 100 1.2 A
IDM() Drain Current (pulsed) 8 A
PTOT Total Dissipation at TC = 25 3 W
Derating Factor 8 W/
dv/dt (2) Peak Diode Recovery voltage slope

6

 V/ns
EAS(3) Single Pulse Avalanche Energy 200 mJ
Tstg Storage Temperature -55 to 150
Tj Max. Operating Junction Temperature -55 to 150

() Pulse width limited by safe operating area. (1) Related to Rthj -l(2) ISD 2A, di/dt 100 A/s, VDD V(BR)DSS, Tj TJMAX(3) Starting Tj = 25 , ID = 2A, VDD = 30V




Description

This Power MOSFET STN2NF06L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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