Position: Home  > All Categories> Integrated Circuits (ICs) > STN2NF10

STN2NF10

MOSFET N-Ch 100 Volt 2 Amp

product image

STN2NF10 Picture
See larger image
SeekIC No. : 00148866 Detail

STN2NF10: MOSFET N-Ch 100 Volt 2 Amp

STN2NF10 Data Sheet

floor Price/Ceiling Price

US $ .35~.59 / Piece | Get Latest Price
Part Number:
STN2NF10
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.59
  • $.45
  • $.39
  • $.35
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2.4 A
Resistance Drain-Source RDS (on) : 260 mOhms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Package / Case : SOT-223
Continuous Drain Current : 2.4 A
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 260 mOhms


Features:

TYPICAL RDS(on) = 0.23


Application

 DC-DC & DC-AC COVERTERS
DC MOTOR CONTROL (DISK DRIVERS, etc.)
SYNCHRONOUS RECTIFICATION


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 100 V
VDGR Drain-gate Voltage (RGS = 20 k ) 100 V
VGS Gate- source Voltage ± 20 V
ID() Drain Current (continuos) at TC = 25
 2 A
ID Drain Current (continuos) at TC = 100 1.26 A
IDM() Drain Current (pulsed) 8 A
PTOT Total Dissipation at TC = 25 2.5 W
  Derating Factor 0.02 W/
EAS(1) Single Pulse Avalanche Energy 300 mJ
Tstg Storage Temperature 65 to 150
Tj Max. Operating Junction Temperature 150
(``) Pulse width limited by safe operating area.
(`) Current limited by the package
(1) ISD 1A, di/dt 300A/s, VDD  V(BR)DSS, Tj TJMAX


Description

This Power MOSFET STN2NF10 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTN2NF10
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C2.4A
Rds On (Max) @ Id, Vgs260 mOhm @ 1.2A, 10V
Input Capacitance (Ciss) @ Vds 280pF @ 25V
Power - Max3.3W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs14nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STN2NF10
STN2NF10
497 8023 1 ND
49780231ND
497-8023-1



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Prototyping Products
AVT4168
DE1
Resistors
A101G
3006P-1-205LF
Memory Cards, Modules
WT32
VTL5C7
Filters
PICO2205A
PICO2204A
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
View more