Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Mounting Style
: SMD/SMT
Packaging
: Reel
Maximum Operating Temperature
: + 150 C
Drain-Source Breakdown Voltage
: 60 V
Package / Case
: SOT-223
Continuous Drain Current
: 3 A
Configuration
: Single Dual Drain
Resistance Drain-Source RDS (on)
: 0.1 Ohms
Features: TYPICAL RDS(on) = 0.08
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHERUGGED TECHNOLOGY
100 % AVALANCHETESTED
APPLICATION ORIENTED CHARACTERIZATIONApplication DC MOTOR CONTROL (DISK DRIVES,etc.)
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATIONSpecifications
| Symbol |
Parameter |
Value |
Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
60 |
V |
| VDGR |
Drain-gate Voltage (RGS = 20 k ) |
60 |
V |
| VGS |
Gate- source Voltage |
± 20 |
V |
| ID |
Drain Current (continuos) at TC = 25
|
3 |
A
|
| ID |
Drain Current (continuos) at TC = 100 |
1.8 |
A |
| IDM() |
Drain Current (pulsed) |
12 |
A |
| PTOT |
Total Dissipation at TC = 25 |
2.5 |
W |
| |
Derating Factor |
0.02 |
W/ |
| dv/dt (1) |
Peak Diode Recovery voltage slope |
6 |
V/ns |
| Tstg |
Storage Temperature |
65 to 150 |
|
| Tj |
Max. Operating Junction Temperature |
150 |
|
(•) Pulse width limited by safe operating area (1) ISD 12 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX New RDS (on) spec. starting from JULY 98
DescriptionThis Power Mosfet is the latest development of STN3NE06 STMicroelectronics unique "Single Feature Size]" stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STN3NE06 Data Sheet
