MOSFET ALT 511-STN3NF06L SOT-223 N-CH 60V 3A
STN3NE06L: MOSFET ALT 511-STN3NF06L SOT-223 N-CH 60V 3A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 3 A | ||
Resistance Drain-Source RDS (on) : | 0.08 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-223 | Packaging : | Reel |
Symbol | Parameter | Value | Unit |
VDS | Drain-source Voltage (VGS = 0) | 60 | V |
VDGR | Drain-gate Voltage (RGS = 20 k ) | 60 | V |
VGS | Gate- source Voltage | ± 20 | V |
ID | Drain Current (continuos) at TC = 25 |
3 | A |
ID | Drain Current (continuos) at TC = 100 | 1.8 | A |
IDM() | Drain Current (pulsed) | 12 | A |
PTOT | Total Dissipation at TC = 25 | 2.5 | W |
Derating Factor | 0.02 | W/ | |
dv/dt (1) | Peak Diode Recovery voltage slope | 6 | V/ns |
Tstg | Storage Temperature | 65 to 150 | |
Tj | Max. Operating Junction Temperature | 150 |
(`) Pulse width limited by safe operating area (1) ISD 12 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX New RDS (on) spec. starting from JULY 98
This Power Mosfet is the latest development of STN3NE06L STMicroelectronics unique "Single Feature SizeÔ " stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche haracteristicsand less critical alignment steps therefore a remarkable manufacturing reproducibility.