STN3NF06

MOSFET N-Ch 30 Volt 3 Amp

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SeekIC No. : 00149581 Detail

STN3NF06: MOSFET N-Ch 30 Volt 3 Amp

floor Price/Ceiling Price

US $ .32~.55 / Piece | Get Latest Price
Part Number:
STN3NF06
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • $.55
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  • Processing time
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Upload time: 2024/5/15

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 16 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 0.07 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 4 A
Package / Case : SOT-223
Resistance Drain-Source RDS (on) : 0.07 Ohms
Drain-Source Breakdown Voltage : 16 V


Features:

 TYPICAL RDS(on) = 0.07
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
AVALANCHE RUGGED TECHNOLOGY



Application

DC-DC & DC-AC COVERTERS
DC MOTOR CONTROL (DISK DRIVERS, etc.)
SYNCHRONOUS RECTIFICATION



Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 k ) 60 V
VGS Gate- source Voltage ± 20 V
ID Drain Current (continuos) at TC = 25
4 A
ID Drain Current (continuos) at TC = 100 2.9 A
IDM() Drain Current (pulsed) 16 A
PTOT Total Dissipation at TC = 25 3.3 W
  Derating Factor 0.026 W/
dv/dt (1) Peak Diode Recovery voltage slope 10 V/ns
EAS(2) Single Pulse Avalanche Energy 200 mJ
Tstg Storage Temperature -55 to 150
Tj Max. Operating Junction Temperature -55 to 150

(`) Pulse width limited by safe operating area. (1) ISD 4A, di/dt  150 A/s, VDD V(BR)DSS, Tj TJMAX(2) Starting Tj = 25 , ID = 4A, VDD = 30V




Description

This STN3NF06 Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTN3NF06
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C4A
Rds On (Max) @ Id, Vgs100 mOhm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds 315pF @ 25V
Power - Max3.3W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs13nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STN3NF06
STN3NF06
497 4764 6 ND
49747646ND
497-4764-6



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